发明名称 WAVELENGTH-TUNABLE SEMICONDUCTOR LASER
摘要 PURPOSE:To make it possible to change continuously an oscillation wavelength within a range of 30Angstrom or longer and to reduce greatly the increase in an oscillation spectral line width by a method wherein each region is provided with electrodes, which respectively are capable of causing a current to flow independently, and at the same time, a luminous region and a phase control region are each divided into a plurality of regions and the divided regions are arranged alternately. CONSTITUTION:A luminous region and a phase control region are respectively divided into 3 pieces of 101, 102 and 103 and 3 pieces of 201, 202 and 203, which are all short in length, and the divided regions are arranged alternately. A large change does not appear in the field distribution in the interior of a resonator in case Ip' and Id are not caused to flow and in case the Ip' and the Id are caused to flow. Even in the carrier density distributions in the interiors of active layers 4, the flatness is maintained and even in case the Ip' and the Id are caused to flow for changing the wavelength, the increase in an oscillation spectral line width can be inhibited small.
申请公布号 JPS6414988(A) 申请公布日期 1989.01.19
申请号 JP19870171528 申请日期 1987.07.08
申请人 NEC CORP 发明人 MITO IKUO
分类号 H04B10/00;H01S3/1055;H01S5/00;H01S5/042 主分类号 H04B10/00
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