| 摘要 |
PURPOSE:To improve thermal characteristic and to prevent a semiconductor device from cracking by isolating heat generating sections of adjacent semiconductor elements, and forming a metal layer on a substrate. CONSTITUTION:After an emitter 2, a base 3 and a collector 4 are formed on a substrate 6, an insulating tape 5 is adhered on a semiconductor element 1. Then, the substrate 6 is reduced in thickness by chemical and mechanical treatment method from the side of the substrate 6. Then, the heat generating section 7 of the element 1 is isolated from that of its adjacent element 1. Thereafter, an insulator 8 is buried in a recess generated in the isolating step, thereby flattening the surface of the substrate. Subsequently, after a metal layer 9 is formed on the whole substrate, the tape 5 is separated, and the insulator 8 is then removed. Thus, the thermal balance with heat dissipation is improved, thereby improving thermal characteristic. Even if the size of a semiconductor element is increased, it can prevent the element from cracking.
|
