| 摘要 |
<p>PURPOSE:To reduce parasitic capacity by a method wherein regions with a passivation layer and regions without the passivation layer are provided in a region, where a drain electrode and a gate electrode are piled up, along the length of the gate electrode. CONSTITUTION:Photoetching is applied for etching a passivation layer 24 into an island and patterning is so accomplished that there will be regions with the passivation layer 24 and regions without the passivation layer 24 along the length of a gate electrode 21. In this example, only the region nearer to a drain electrode 27 is divided into regions with or without the passivation layer 24. A similar design is also feasible wherein the region nearer to a source electrode is similarly divided, where the passivation layer 24 may be divided into a plurality of independent islands. In a device designed as such, a parasitic capacity CGD attributable to the overlapping of a gate electrode 7 and a drain electrode 11 may be reduced, which suppresses irregular or residual images from being generated.</p> |
