| 摘要 |
PURPOSE: To reduce the size of each structure more with high reliability by using the plasma etching method so as to remove a conductive layer with etching, depositting a second passivation layer onto a remaining conductor region, removing other parts than a region located on a contact bridge through etching by the plasma etching method and depositting connection purpose metallization materials. CONSTITUTION: A continuous conductive layer 20 made of a material to form a fusible contact bridge is formed on a first passivation layer 14 and in a contact window 18, the conductor layer 20 is partially removed through etching by using the plasma etching method so as to leave a contact bridge 22 having an ancillary connection terminal 21 and a conductor region only extended from the contact bridge 22 to a connecting point in the window 18. Then a second passivation layer 24 is formed on the remaining conductor region, and other parts than the region placed on the contact bridge 22 are removed through etching. Then connection purpose metallization materials 26, 28 are deposited in the region of the window 8 and on the connection terminal 21. |
