| 摘要 |
Apparatus and method for repairing semiconductor masks (32) and reticles is disclosed, utilizing a focused ion beam system (8) capable of delivering, from a single ion column, several different species of focused ion beams (12), each of which is individually optimized to meet the differing requirements of the major functions to be performed in mask repair. This method allows the mask (32) to be imaged with high resolution and minimum mask damage. Opaque defects are removed by sputter etching at high rates with minimum damage to the mask substrate (32), with the optional use of a sputter rate enhancing gas such as chlorine, and clear defects are filled in at high rates by deposition of a metallic or other substance compatible with the mask materials by condensation of metal-containing vapor such as chromium hexacarbonyl using a focused ion beam. A focused ion beam column able to produce precisely focused ion beams (12) is employed and is operated at high energies for imaging and sputter etching, and at low energies for imaging and deposition. A liquid metal alloy source (10) containing a plurality of suitable atomic species is employed.
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