| 摘要 |
<p>PURPOSE:To exactly form the fine pattern of an electron beam resist without generating the charge up phenomenon of the resist by incorporating a specified polyalkyl thiophene in the title material. CONSTITUTION:The polyalkyl thiophene shown by formula I is used for a positive type resist having the high sensitivity against electron beams. In the formula, R1 and R2 are each alkyl group, (n) is a positive integer. The negative type resist is preferably composed of a polychlorinated alkyl thiophene in which in formula I, R1 is alkyl group and R2 is a higher alkyl group substituted an endo group thereof with chlorine atom. The positive type resist is preferably composed of a polymer shown by formula II. In formula II, R1-R3 are each alkyl group or hydrogen atom, (n) is a positive integer.</p> |
