| 摘要 |
PURPOSE: To improve the density of memory points by providing a recessed section, with which the extended part of a gap is limited, on a conductive band element containing an insulating material inside the gap with an upper insulating layer and extending a contact aperture toward the center of the extended part for self-aligning. CONSTITUTION: The insulating material is contained inside the gaps 15 and 15' between a conductive band element 13 and an upper insulating layer 32 above the conductive band element 13, the conductive band element 13 has a recessed section 17 for limiting extended parts 16 and 16' of gaps 15 and 15', and a contact aperture 18 has a contour extended toward the center of the extended parts 16 and 16' and placed in a fixed distance from the conductive band element 13. The contact aperture of a source is extended to the extended part positioned pentagonal suitable while being related with the extended part where the contact aperture of a drain is extended. Thus, the degree of integration of circuit can be improved. |
