发明名称 GUARD RING STRUCTURE
摘要 <p>An avalanche photodiode having a beryllium guard ring. The beryllium is implanted at a dosage of at least 5 x 10?14 per cm2¿ and preferably at 3 x 10?15 per cm2¿ and subsequently annealed to provide a guard ring profile with a p+ core and a superlinearly graded tail. The doping profile of the guard ring immediately adjacent the core is superlogarithmic.</p>
申请公布号 WO1990015446(A1) 申请公布日期 1990.12.13
申请号 GB1990000895 申请日期 1990.06.08
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