发明名称 |
SIC REFRACTORY BONDED WITH SILICON NITRIDE AND ITS PRODUCTION |
摘要 |
PURPOSE:To obtain the subject material having improved high-temperature mechanical strength and thermal shock resistance by bonding SiC particles with a binder consisting of silicon nitride. CONSTITUTION:SiC aggregate particles are mixed with metallic Si and the mixture is formed, nitrided and repeatedly oxidized in an atmosphere having a prescribed oxygen concentration at a prescribed temperature for a prescribed period to obtain the objective SiC refractory having excellent thermal shock resistance. |
申请公布号 |
JPH04292464(A) |
申请公布日期 |
1992.10.16 |
申请号 |
JP19910078481 |
申请日期 |
1991.03.18 |
申请人 |
NGK INSULATORS LTD;N G K ADRECH KK |
发明人 |
HANZAWA SHIGERU;KINOSHITA TOSHIHARU;SAITO HIDEO;ITO TOSHIYUKI |
分类号 |
C04B35/565;C04B35/56;C04B35/573 |
主分类号 |
C04B35/565 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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