发明名称 NONVOLATILE MEMORY DEVICE
摘要 <p>PURPOSE:To suppress the increase of the electric current at a write time, even in the case that the data bus becomes multi-bits. CONSTITUTION:The read and write control signal corresponded to the chip enable signal/CE outputted from a read/write control circuit 20, is divided by the division signal DV outputted from a counter 24 in AND circuits 21, 22. A first and a second write circuits 17, 18 write alternately the data in a memory cell array 11 by the division signal DV. Then even in the case that the data bus becomes multi-bits, the increase of the electric current at a write time can be suppressed compared with the case that the data is written en bloc.</p>
申请公布号 JPH0528779(A) 申请公布日期 1993.02.05
申请号 JP19910178202 申请日期 1991.07.18
申请人 TOSHIBA CORP 发明人 YAMAZAKI AKIHIRO;KASAI HISAMICHI
分类号 G11C17/00;G11C16/02;G11C16/06;H01L21/8247;H01L27/115 主分类号 G11C17/00
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