| 摘要 |
A method for forming an isolation wall in a silicon semiconductor substrate (10) wherein a trench (12) is etched into the silicon using a hard mask (30), a layer of silicon dioxide (14) is formed on the side walls of the trench, a filling of polysilicon (16) is placed in the region between the side wall layers, the polysilicon is planarized by etching while the hard mask remains in place, and the hard mask then is stripped from the silicon, permitting field oxide (18) to be grown over the trench region. |
