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发明名称
Isolierter Gate-Feldeffekttransistor
摘要
申请公布号
DE3628309(C2)
申请公布日期
1994.01.20
申请号
DE19863628309
申请日期
1986.08.21
申请人
MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP
发明人
ISHII, TATSUYA, ITAMI, HYOGO, JP
分类号
H01L29/06;H01L29/10;H01L29/417;H01L29/423;H01L29/78;(IPC1-7):H01L29/784;H01L29/52;H01L29/60
主分类号
H01L29/06
代理机构
代理人
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