| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for removing a recessed stringer in manufacturing a nanowire transistor (NWT). <P>SOLUTION: According to the method, a cylindrical nanostructure is provided, which has an axis whose external surface is in contact with a substrate surface and which contains an insulating semiconductor core. A conductive thin film is deposited on the nanostructure to function as a gate strap or as a combination of a gate and a gate strap. A hard mask insulator is deposited on the conductive thin film, and is subjected to anisotropic plasma etching to etch a hard mask selective region. As a result, a conductive thin film gate electrode encircling the cylindrical portion of the nanostructure is formed. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
