| 摘要 |
PROBLEM TO BE SOLVED: To obtain a rear surface irradiation type solid-state imaging element having an oxide film in which its film thickness is closely controlled while using an SOI wafer. SOLUTION: This rear surface irradiation type solid-state imaging element 54 is provided with a semiconductor substrate 1 having an oxide film 2 of 1-50 nm in thickness on it rear surface; a light-receiving section 44 and a charge transfer section 46 formed on the front surface of the semiconductor substrate 1; and a color filter 19 and microlenses 22 formed on the oxide film 44. The semiconductor substrate 1 having an oxide film 2 is formed of an SOI wafer having an oxide film and a silicon layer formed on a silicon substrate by removing the silicon substrate with a solution principally containing KOH. COPYRIGHT: (C)2009,JPO&INPIT
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