| 摘要 |
PROBLEM TO BE SOLVED: To reduce the resistance, increase the withstand voltage, and improve the reverse recovery characteristic of a Schottky barrier diode in a super junction structure. SOLUTION: In the super junction structure, an N column 20 and a P column 30 constitute the Schottky barrier diode. Lattice defects are formed in the entire super junction structure, and a region with the lattice defects formed serves as a life time control region 50. Thus, the life time of minority carriers in the N column 20 and P column 30 can be shortened while a current flowing in the reverse direction can be reduced, and the reverse recovery characteristic of the semiconductor device can be improved. COPYRIGHT: (C)2009,JPO&INPIT |
