| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which can equalize the thickness of a film formed on the processed surface of a substrate. SOLUTION: The substrate processing apparatus includes a column 212 for holding a wafer 200, a processing chamber for storing the wafer 200, gas supply ports 248a and 248b for supplying desired processing gas in parallel with the processed surface of the wafer 200 stored in the processing chamber, a regulating plate 300 opposed to the processed surface of the wafer 200 stored in the processing chamber, and an evacuating means for evacuating an atmosphere in the processing chamber. In a direction orthogonal to the supply direction of the processing gas, a distance between the processed surface of the wafer 200 and the central portion 330 of the regulating plate 300 is smaller than a distance between the processed surface of the wafer 200 and an edge 310 of the regulating plate 300 and a distance between the processed surface of the wafer 200 and an intermediate portion 320 of the regulating plate 300. COPYRIGHT: (C)2009,JPO&INPIT
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