发明名称 |
FABRICATING A CONTACT RHODIUM STRUCTURE BY ELECTROPLATING AND ELECTROPLATING COMPOSITION |
摘要 |
A contact rhodium structure is fabricated by a process that comprises obtaining a substrate having a dielectric layer thereon, wherein the dielectric layer has cavities therein into which the contact rhodium is to be deposited; depositing a seed layer in the cavities and on the dielectric layer; and depositing the rhodium by electroplating from a bath comprising a rhodium salt; an acid and a stress reducer; and then optionally annealing the structure.
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申请公布号 |
US2008261066(A1) |
申请公布日期 |
2008.10.23 |
申请号 |
US20070737926 |
申请日期 |
2007.04.20 |
申请人 |
IBM CORPORATION (YORKTOWN) |
发明人 |
DELIGIANNI HARIKLIA;SHAO XIAOYAN |
分类号 |
C25D5/00;C22C28/00 |
主分类号 |
C25D5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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