发明名称 FABRICATING A CONTACT RHODIUM STRUCTURE BY ELECTROPLATING AND ELECTROPLATING COMPOSITION
摘要 A contact rhodium structure is fabricated by a process that comprises obtaining a substrate having a dielectric layer thereon, wherein the dielectric layer has cavities therein into which the contact rhodium is to be deposited; depositing a seed layer in the cavities and on the dielectric layer; and depositing the rhodium by electroplating from a bath comprising a rhodium salt; an acid and a stress reducer; and then optionally annealing the structure.
申请公布号 US2008261066(A1) 申请公布日期 2008.10.23
申请号 US20070737926 申请日期 2007.04.20
申请人 IBM CORPORATION (YORKTOWN) 发明人 DELIGIANNI HARIKLIA;SHAO XIAOYAN
分类号 C25D5/00;C22C28/00 主分类号 C25D5/00
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