| 摘要 |
A hydrogen ashing method using water vapor and diluent gas is provided to prevent reduction of low-k dielectric materials by penetrating oxygen element in a phosphorous part. Plasma of ashing gas, which includes a first amount of reduction gas selected from a group consisting of hydrogen gas and ammonium gas, a second amount of water vapor greater than the first amount of reduction gas, and a third amount of dilute gas, greater than the second amount of water vapor, selected from a group consisting of argon gas and helium gas without oxygen gas, is applied to a substrate(40). The reduction gas includes hydrogen gas. The reduction gas includes ammonium gas. The ashing gas includes a fourth amount of hydrocarbon.
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