| 摘要 |
PROBLEM TO BE SOLVED: To simulate the operation of IGBT with high precision. SOLUTION: Currents I<SB>E</SB>, I<SB>C</SB>, and I<SB>Drain</SB>of IGBT are represented using a potential difference V<SB>EB</SB>at a junction part between an internal P+ (emitter) region 20 and an N (base) region 18, and are determined with Kirchhoff principle I<SB>E</SB>=I<SB>C</SB>+I<SB>Drain</SB>about the current in the IGBT. Using the determined V<SB>EB</SB>, the currents I<SB>E</SB>, I<SB>C</SB>, and I<SB>Drain</SB>are acquired. A transitional current is determined based on the change amount of internal accumulated charges. COPYRIGHT: (C)2009,JPO&INPIT
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