发明名称 TEMPERATURE SETTING METHOD FOR THERMAL PROCESSING PLATE, TEMPERATURE SETTING APPARATUS FOR THERMAL PROCESSING PLATE, AND COMPUTER-READABLE STORAGE MEDIUM
摘要 In the present invention, the line widths within a substrate of an etching pattern are measured for a substrate for which photolithography processing and an etching treatment thereafter have been finished. The line width measurement results are converted into the line widths of a resist pattern using relational expressions which have been obtained in advance. From the converted line widths of the resist pattern, coefficients of a polynomial function indicating variations within the substrate are calculated. Next, a function between line width correction amounts for the resist pattern and temperature correction values is used to calculate temperature correction values for the regions of the thermal plate to bring the coefficients of the polynomial function close to zero. Based on each of the calculated temperature correction values, the temperature for each of the regions is set.
申请公布号 US2008257495(A1) 申请公布日期 2008.10.23
申请号 US20080099970 申请日期 2008.04.09
申请人 TOKYO ELECTRON LIMITED 发明人 TADOKORO MASAHIDE;JYOUSAKA MEGUMI;KONISHI YOSHITAKA;SHINOZUKA SHINICHI;OGATA KUNIE
分类号 C23F1/00;G06F19/00;H01L21/027 主分类号 C23F1/00
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