发明名称 PLASMA PROCESSING APPARATUS AND METHOD FOR STABILIZING INNER WALL OF PROCESSING CHAMBER
摘要 A plasma processing apparatus is disclosed for removing the deposition film in the processing chamber and suppressing the corrosion of wall surface material. The plasma processing apparatus includes a plasma generating means, a monitor means for detecting the existence of a reaction product containing a material constituting an inner wall of the processing chamber, and an alarm means for notifying that the existence of the reaction product containing the material constituting the inner wall of the processing chamber has exceeded a predetermined amount. The plasma processing apparatus is configured such that plasma cleaning is performed for every arbitrary etching process, and a wall surface stabilization process is subsequently performed using O<SUB>2 </SUB>gas or F gas.
申请公布号 US2008257863(A1) 申请公布日期 2008.10.23
申请号 US20070849264 申请日期 2007.08.31
申请人 KITSUNAI HIROYUKI;ITABASHI NAOSHI;YOSHIGAI MOTOHIKO;ONO TETSUO 发明人 KITSUNAI HIROYUKI;ITABASHI NAOSHI;YOSHIGAI MOTOHIKO;ONO TETSUO
分类号 C23F1/00;B08B7/00;H01J37/32;H01L21/306 主分类号 C23F1/00
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