GALLIUM NITRIDE LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME

摘要

A nitride light emitting device is provided to remarkably reduce a defect density caused by a lattice mismatch between a substrate and a nitride layer by patterning a thin film conversion layer on a substrate and by forming a nitride layer of a low defect density on the resultant structure. A thin film conversion layer(23) of a predetermined pattern that converts the wavelength of light is formed on a predetermined substrate(21). A nitride layer is formed on the substrate having the thin film conversion layer. A part of the nitride layer is etched to form an electrode layer. The substrate can be a sapphire substrate. The process for forming the thin film conversion layer can include the following steps. A buffer layer is formed on the substrate. The thin film conversion layer is formed on the buffer layer.