| 摘要 |
<p>A method for manufacturing semiconductor films and a method for manufacturing photovoltaic elements are provided to control easily temperature of a catalyst line by suppressing resistance variation of the catalyst line according to formation of an amorphous silicon film on a basic film. Material gas of semiconductor is prepared. Atmosphere pressure caused by the material gas is adjusted to a predetermined pressure. After the adjustment of the atmosphere pressure, a catalyst line(4) is heated above a predetermined temperature. By resolving the material gas using the heated catalyst line, a semiconductor layer(10) is formed. The material gas is diluted by non-material gas. The material gas includes silane based gas and the non-material gas includes hydrogen gas.</p> |
