| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric cell whose absorption quantity of a photosensitizer in a metal oxide semiconductor layer is high, bonding strength between the metal oxide semiconductor layer and the photosensitizer is strong and the photoelectric conversion efficiency is remarkably improved. SOLUTION: In the photoelectro cell, (i) a semiconductor film 2 of metallic oxide consists of metallic oxide particles in range of 5-600 nm of average particle diameter, (ii) the metallic oxide particles is core-shell structure of core particle and shell formed on surface of the core particle, (iii) average particle diameter of the core is in a range of 2-500 nm and thickness of the shell is in a range of 1-150 nm, and (iv) an inherent volume resistance (Ec) of metallic oxide consisting the core particle and an inherent volume resistance (Es) of metallic oxide consisting the shell have a relation of Ec<Es. |
