| 摘要 |
1,108,372. Frequency modulation; Gunn effect oscillators. TELEFUNKEN PATENTVERWERTUNGS G.m.b.H. 9 June, 1966 [12 June, 1965; 12 Aug., 1965; 25 Nov., 1965; 4 Dec., 1965], No. 25786/66. Headings H3R and H3T. [Also in Division H1] A Gunn effect oscillator arrangement comprises a IIIV semi-conductor element which is subjected to a control H.F. oscillation which varies the field strength parallel to the carrier drift velocity above and below the Gunn critical value so that the oscillation frequency is controlled. In the embodiments the H.F. oscillation is superimposed on a D.C. bias voltage applied across a gallium arsenide element and it is shown that by appropriately selecting the relative values of T pr (the period of the Gunn oscillation of the element) and T s (period of the control voltage) and the value of the bias voltage relative to the Gunn critical voltage, the arrangement may constitute a synchronized oscillator, or frequency divider, a keyed oscillator or a frequency modulated wave (Fig. 8, not shown). The control frequency (G) (e.g. an amplitude modulated wave) may be applied via a circulator (Z) (Fig. 9, not shown), to the Gunn semi-conductor element (P r ), the third part of the circulator being connected to load (R L ). The effect of the control frequency may be exercised by a resonant circuit coupled to the element instead of a separate high frequency source, the resonant circuit being formed by lumped circuit element or a resonant cavity or strip-line; the element may be mounted on the cavity wall. The reactive components of the tuned circuit may be made variable to influence the Gunn oscillations variations being effected mechanically, thermally or by using electronic reactances. The oscillator may be used to supply the pump frequency in a parametric amplifier. |
