| 摘要 |
An apparatus for depositing a thin film and a method for making a thin film transistor using the same are provided to deposit a polycrystalline silicon layer without a crystallization process by dividing the polycrystalline silicon layer into a thin film using a plasma of a CCP(Capacitive Coupled Plasma) method and a thin film using of a plasma of an ICP(Inductive Coupled Plasma) method. An apparatus for depositing a thin film comprises a transfer chamber(192), and first, second, and third processing chambers(194,195,196). The transfer chamber moves a substrate. The first processing chamber, which is connected with the transfer chamber, has a CCP(Capacitive Coupled Plasma) method of forming a silicon nitride layer. The second processing chamber, which is connected with the transfer chamber, has an ICP(Inductive Coupled Plasma) method of forming a polysilicon layer on the silicon nitride layer. The third processing chamber, which is connected with the transfer chamber, has the CCP method of forming an amorphous silicon layer on the polysilicon layer. A fourth processing chamber, which is connected with the transfer chamber, has the CCP method of forming an impurity amorphous silicon layer on the amorphous silicon layer.
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