| 摘要 |
A display device and a method for fabricating the same are provided to form semiconductor patterns of a driving thin film transistor and a switching thin film transistor by using amorphous silicon. A display device includes a pixel unit, a driving thin film transistor(Tr1), and a pixel electrode(150). The pixel unit is formed on a substrate and includes a transmission unit(P1) for transmitting light. The driving thin film transistor is formed on the transmission unit and includes a transparent gate electrode, a transparent semiconductor pattern(122), and a gate insulating film. The transparent gate electrode has an area corresponding to the transmission unit. The transparent semiconductor pattern has an area corresponding to the gate electrode. The gate insulating film is interposed between the gate electrode and the semiconductor pattern. The pixel electrode is electrically connected to the driving thin film transistor and positioned on at least transmission unit. |
