发明名称 |
Method and system for forming dual work function gate electrodes in a semiconductor device |
摘要 |
A method is provided for forming dual work function gate electrodes. A dielectric layer is provided outwardly of a substrate. A metal layer is formed outwardly of the dielectric layer. A silicon-germanium layer is formed outwardly of the metal layer. A first portion of the silicon-germanium layer is removed to expose a first portion of the metal layer, with a second portion of the silicon-germanium layer remaining over a second portion of the metal layer. A silicon-germanium metal compound layer is formed from the second portion of the silicon-germanium layer and the second portion of the metal layer. A first gate electrode comprising the first portion of the metal layer is formed. A second gate electrode comprising the silicon-germanium metal compound layer is formed.
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申请公布号 |
US7432566(B2) |
申请公布日期 |
2008.10.07 |
申请号 |
US20040911165 |
申请日期 |
2004.08.04 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
ROTONDARO ANTONIO L. P.;VISOKAY MARK R. |
分类号 |
H01L29/76;H01L21/28;H01L21/8234;H01L21/8238;H01L27/088;H01L29/423;H01L29/49;H01L29/51 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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