| 摘要 |
The present invention provides a nitride semiconductor light emitting device with an active layer of the multiple quantum well structure, in which the device has an improved luminous intensity and a good electrostatic withstanding voltage, thereby allowing the expanded application to various products. The active layer (7) is formed of a multiple quantum well structure containing In a Ga1-a N (0 .ltoreq. a < 1). The p-cladding layer (8) is formed on said active layer containing the p-type impurity. The p-cladding layer (8) is made of a multi-film layer including a first nitride semiconductor film containing A1 and a second nitride semiconductor film having a composition different from that of said first nitride semiconductor film. Alternatively, the p-cladding layer (8) is made of single-layered layer made of Al b Ga1-b N (0 .ltoreq. b .ltoreq. 1). A low-doped layer (9) is grown on the p-cladding layer (8) having a p-type impurity concentration lower than that of the p-cladding layer (8). A p-contact layer is grown on the low-doped layer (9) having a p-type impurity concentration higher than those of the p-cladding layer (8) and the low-doped layer (9).
|
