发明名称 |
CMOS thin film transistor comprising common gate, logic device comprising the CMOS thin film transistor, and method of manufacturing the CMOS thin film transistor |
摘要 |
A complementary metal oxide semiconductor (CMOS) thin film transistor including a common gate, a logic device including the CMOS thin film transistor, and a method of manufacturing the CMOS thin film transistor are provided. In one embodiment, the CMOS thin film transistor includes a base substrate and a semiconductor layer formed on the base substrate. A PMOS transistor and an NMOS transistor are formed on a single semiconductor layer to intersect each other, and a common gate is formed on the intersection area. In addition, a Schottky barrier inducing material layer is formed on a source and a drain of the PMOS transistor.
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申请公布号 |
US7432554(B2) |
申请公布日期 |
2008.10.07 |
申请号 |
US20050305394 |
申请日期 |
2005.12.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM MOON-KYUNG;LEE JO-WON;PARK YOON-DONG;KIM CHUNG-WOO |
分类号 |
H01L27/08 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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