Non-volatile memory devices and operating methods thereof

摘要

Non-volatile memory devices and operating methods thereof are provided. In an operating method, a first operation is performed by applying a first voltage to at least one word line. The first operation includes one of a programming or erasing operation. The first operation is verified by applying a verify voltage to each of the at least one word lines. The voltage level of each verify voltage is determined according to position information of a corresponding one of the at least one word lines.