| 摘要 |
A multi-finger transistor and method of manufacturing the same are provided. The multi-finger transistor includes two active regions, a multi-finger gate, a plurality of source regions and a plurality of drain regions. The two active regions are defined in a unit cell of a substrate. The multi-finger gate includes a plurality of gate fingers formed in the two active regions and a gate connector between the two active regions. The gate connector connects the gate fingers to each other. The source regions are formed in first portions of the two active regions adjacent to the gate fingers. The drain regions are formed in second portions of the two active regions adjacent to the gate fingers.
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