| 摘要 |
<p>A method of etching a semiconductor device consisting of a substrate, optionally one or more base electrode layers, a silicon layer, and at least one backside electrode layer is disclosed. The method involves the steps of : applying a resist layer to the backside electrode layer and selectively removing portions thereof to expose discrete areas of the underlying backside electrode layer and etching away both the backside electrode layer and the underlying silicon layer in said discrete areas. The method is characterised in that: i. the resist layer is a polymeric alkalophobe composition, portions thereof being selectively removed by means of an acidic developer; ii. the backside electrode layer(s) are of a material which is resistant to said acidic developer, which is rinsed from the device after developing said portions of said resist layer, and iii. the etching of both said backside electrode layer and said silicon layer is conducted sequentially using the same alkaline etchant. The invention has particular application to the production of photovoltaic cells for generating electricity when exposed to light, and to flat panel displays for generating light when electricity is applied to the active substrate therein.</p> |
