SEMICONDUCTOR JUNCTION DEVICE HAVING REDUCED LEAKAGE CURRENT AND METHOD OF FORMING SAME
摘要
A semiconductor junction device includes a semiconductor substrate of a first conductivity type and a junction layer formed on the substrate which has a second conductivity type. A field reducing region of the first conductivity type surrounds a periphery of the junction layer and extends under a peripheral portion of the junction layer. An insulating layer is provided on the field reducing region and a metal layer overlies the junction layer and the insulating layer.
申请公布号
WO2008020982(A3)
申请公布日期
2008.08.28
申请号
WO2007US16978
申请日期
2007.07.30
申请人
VISHAY GENERAL SEMICONDUCTOR LLC;DAI, SHENG-HUEI;KING, YA-CHIN;WANG, HAI-NING;CHIANG, MING-TAI