发明名称 |
REPAIRABLE SEMICONDUCTOR MEMORY DEVICE AND REPAIRING METHOD OF THIS SEMICONDUCTOR MEMORY DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a repairable semiconductor memory device and a repairing method. <P>SOLUTION: This semiconductor memory device includes a memory cell array having a first block for preserving first system data and a second block for preserving second system data in the same as the first system data. A controller outputs the first system data to a memory unit in response to a reset signal outputted from a host, and transmits the second system data to the memory unit based on a fail detecting signal generated by an ECC detecting block. The ECC detecting block determines whether or not the first system data is defective data. When a defect is caused in the first system data while resetting the semiconductor memory device, the first system data is repaired by providing the second system data. <P>COPYRIGHT: (C)2008,JPO&INPIT |
申请公布号 |
JP2008198192(A) |
申请公布日期 |
2008.08.28 |
申请号 |
JP20080008106 |
申请日期 |
2008.01.17 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
RI HEIKUN;KIM KI-HONG;LEE SEUNG-WON;KIM SUN KWON |
分类号 |
G06F12/16;G11C16/06;G11C29/04;G11C29/42 |
主分类号 |
G06F12/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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