<p>An apparatus, system and method for repairing a carbon depleted low-k material in a low-k dielectric film layer includes identifying a repair chemistry having a hydrocarbon group, the repair chemistry configured to repair the carbon depleted low-k material and applying the identified repair chemistry meniscus to the low-k dielectric film layer such that the carbon depleted low-k material in the low-k dielectric film layer is sufficiently exposed to the repair chemistry meniscus substantially repairing the low-k material. The repaired low-k material exhibits substantially equivalent low-k dielectric characteristics of the low-k dielectric film layer.</p>
申请公布号
WO2008103223(A1)
申请公布日期
2008.08.28
申请号
WO2008US01058
申请日期
2008.01.24
申请人
LAM RESEARCH CORPORATION;YUN, SEOKMIN;WILCOXSON, MARK;DE LARIOS, JOHN, M.