| 摘要 |
PROBLEM TO BE SOLVED: To provide a power semiconductor module capable of operating at a high reverse voltage. SOLUTION: The power semiconductor module mounted to a cooling element comprises at least a substrate 2 mounted with components 5, 6 and 7, and a module housing. The module housing at least partially surrounds at least the substrate 2. The module housing comprises a first face opposing the cooling element, and a second face having at least an opening and a surface apart from the power semiconductor module. Each of at least one opening has a boundary sealed by internal contacts 16, 17 and 18, and is electrically connected to at least components 5, 6 and 7. Internal contacts project from the module housing so as to extend without going over the second face of the module housing. COPYRIGHT: (C)2008,JPO&INPIT |
