| 摘要 |
An electro-optical substrate, including: a transparent substrate; a first light-shielding layer arranged on a first surface of the transparent substrate, in at least part of a region surrounding an opening in plan view; a first insulating layer arranged in a position facing the transparent substrate with the first light-shielding layer interposed therebetween, the first insulating layer having a refraction index n and a layer thickness t measured in nanometers, and covering at least part of the first light-shielding layer; a semiconductor layer, arranged in a position facing the transparent substrate, with the first light-shielding layer interposed therebetween, containing part of a thin film transistor, the thin film transistor including a channel region which is, in plan view, positioned within the first light-shielding layer, a corner edge of the first light-shielding layer and a corner edge of the channel region having a distance L<SUB>c </SUB>therebetween in nanometers, the distance L<SUB>c </SUB>satisfying relational expression 1: nt<SUP>2</SUP><244L<SUB>c</SUB>; a gate insulating layer covering the channel region; a gate electrode arranged in a region facing the channel region, with the gate insulating layer being interposed therebetween; a second insulating layer arranged to a position covering at least the gate electrode; and a second light-shielding layer provided in a position facing the semiconductor layer with the second insulating layer interposed therebetween, so as to cover at least the channel region.
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