SEMICONDUCTOR LD EPI-STRUCTURE AND SEMICONDUCTOR LD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor LD epitaxial structure which solves problems in conventional techniques and has a small distribution in an epitaxial wafer surface of an active layer PL wavelength. SOLUTION: In a semiconductor LD epitaxial structure 1 constituted by laminating thin film crystals of multi layers containing an N cladding layer 4, an active layer 5 and a P cladding layer 6 on a substrate 2, a thin film of the N cladding layer 4 is carried out in 500 nm or more, 1,000 nm or less. COPYRIGHT: (C)2008,JPO&INPIT