| 摘要 |
There is provided a method for forming minute patterns ranging from nanometer scale to micrometer scale with high aspect ratio at one time under a single condition of low temperature, low pressure, and a short period of time. A method of forming a minute pattern according to the present invention includes: applying, onto a substrate, a patterning material containing a polysilane and a silicone compound; pressing a mold on which a predetermined minute pattern has been formed to the patterning material which has been applied onto the substrate; irradiating energy rays from a side of the substrate while the mold is contacted by press with the patterning material; releasing the mold; and irradiating the patterning material with energy rays from a side to which the mold has been pressed.
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