发明名称 BIAS CIRCUIT AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To obtain a bias circuit which will not influence amplifier characteristics in a required frequency band, absorbs unwanted waves in a wideband, starting from a low-frequency band to a high-frequency band and can suppress voltage drop to a very small extent. SOLUTION: All the unwanted waves in a high-frequency band are absorbed, and the bias circuit which stably operates over a wideband is obtained by constituting the bias circuit, by connecting a second tip opening line whose length is outside the desired frequency and having a quarter wavelength in the center position of a second transmission line and serially connecting resistance for absorbing the unwanted waves outside the desired frequency. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008199455(A) 申请公布日期 2008.08.28
申请号 JP20070034678 申请日期 2007.02.15
申请人 MITSUBISHI ELECTRIC CORP 发明人 MIZUTANI TOMOHIRO
分类号 H03F3/60;H01P1/00 主分类号 H03F3/60
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