发明名称 |
FIELD EFFECT TRANSISTOR WITH METAL-SEMICONDUCTOR JUNCTION |
摘要 |
A MOSFET transistor comprising a substrate of semiconductor material having a source junction connected to a source electrode, a drain junction connected to a drain electrode, and a gate layer connected to a gate electrode, the source junction or the drain junction being a metal-semiconductor junction. |
申请公布号 |
WO2008101926(A2) |
申请公布日期 |
2008.08.28 |
申请号 |
WO2008EP52005 |
申请日期 |
2008.02.19 |
申请人 |
UNIVERSITA' DEGLI STUDI DI PADOVA;MENEGHESSO, GAUDENZIO;MARINO, FABIO ALESSIO |
发明人 |
MENEGHESSO, GAUDENZIO;MARINO, FABIO ALESSIO |
分类号 |
H01L29/08;H01L29/10;H01L29/78 |
主分类号 |
H01L29/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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