| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element exhibiting excellent emission efficiency in ultraviolet region. <P>SOLUTION: A III nitride semiconductor layer 2 is formed on an AlN substrate 1 having m face as a major surface. The III nitride semiconductor layer 2 has a multilayer structure laminating an n-type contact layer 21, a multiple quantum well (MQW) layer 22 as a light-emitting layer (active layer), an AlGaN final barrier layer 25, a p-type electron block layer 23, and a p-type contact layer 24 sequentially from the AlN substrate 1 side. The multiple quantum well layer 22 has such a structure as the quantum well layer and the barrier layer are laminated alternately a plurality of times. The quantum well layer is composed of AlInN. <P>COPYRIGHT: (C)2008,JPO&INPIT |
