发明名称 |
Thin film transistor and method of manufacturing the same |
摘要 |
Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor may include a gate; a channel layer; a source and a drain, the source and the drain being formed of metal; and a metal oxide layer, the metal oxide layer being formed between the channel layer and the source and the drain. The metal oxide layer may have a gradually changing metal content between the channel layer and the source and the drain.
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申请公布号 |
US2008203387(A1) |
申请公布日期 |
2008.08.28 |
申请号 |
US20080007038 |
申请日期 |
2008.01.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
KANG DONG-HUN;GENRIKH STEFANOVICH;SONG I-HUN;PARK YOUNG-SOO;KIM CHANG-JUNG |
分类号 |
H01L29/221;H01L21/441 |
主分类号 |
H01L29/221 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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