| 摘要 |
PROBLEM TO BE SOLVED: To provide a GaN-based semiconductor device having improved responsivity in the high-frequency operation by stabilizing the surface level and suppressing the surface leak even when the surface level is formed in the device. SOLUTION: A GaN buffer layer 2, an undoped GaN layer 3, an n-type GaN drain layer 4, and a p-type GaN channel layer 5 are laminated on a sapphire substrate 1, and an n-type GaN source layer 6 is formed on the p-type GaN channel layer 5. A gate insulating film 7 is formed on the inclined surface at the side face of a ridge portion A, and a gate electrode 8 is laminated on the gate insulating film 7. An insulating film 11 is formed on the exposed semiconductor surface except the semiconductor surface on which the drain electrode 10 and the source electrode 9 are formed and the semiconductor surface covered with the gate insulating film 7, so that all the exposed semiconductor surface is covered with the insulating film 11. COPYRIGHT: (C)2008,JPO&INPIT
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