发明名称 |
AL-based alloy sputtering target and process for producing the same |
摘要 |
<p>The present invention relates to an Al-based alloy sputtering target, comprising Ni in an amount of 0.05 to 10 atomic percent, wherein the Al-based alloy sputtering target satisfies: (1) that a ratio of a P value to a total area of a sputtering surface is 70% or more, wherein the P value indicates a total of area fractions of <001> ± 15°, <011> ± 15°, <111> ± 15° and <311> ± 15°; (2) that a ratio of the area fraction of <011> ± 15° to the P value is 30% or more; and (3) that a ratio of the area fraction of <111> ± 15° to the P value is 10% or less, when crystallographic orientations <001>, <011>, <111> and <311> in a normal line direction to a sputtering surface of the Al-based alloy sputtering target are observed in accordance with the electron backscatter diffraction pattern method.</p> |
申请公布号 |
EP1932940(A1) |
申请公布日期 |
2008.06.18 |
申请号 |
EP20070022151 |
申请日期 |
2007.11.14 |
申请人 |
KABUSHIKI KAISHA KOBE SEIKO SHO;KOBELCO RESEARCH INSTITUTE , INC. |
发明人 |
TAKAGI, KATSUTOSHI;EHIRA, MASAYA;KUGIMIYA, TOSHIHIRO;YONEDA, YOICHIRO;GOTOU, HIROSHI |
分类号 |
C23C14/34;C22C21/00 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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