| 发明名称 |
Reducing oxidation under a high K gate dielectric |
| 摘要 |
A metal layer is formed on a dielectric layer, which is formed on a substrate. After forming a masking layer on the metal layer, the exposed sides of the dielectric layer are covered with a polymer diffusion barrier.
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| 申请公布号 |
US7387927(B2) |
申请公布日期 |
2008.06.17 |
| 申请号 |
US20040939227 |
申请日期 |
2004.09.10 |
| 申请人 |
INTEL CORPORATION |
发明人 |
TURKOT, JR. ROBERT B.;BRASK JUSTIN K.;KAVALIEROS JACK;DOCZY MARK L.;METZ MATTHEW V.;SHAH UDAY;DATTA SUMAN;CHAU ROBERT S. |
| 分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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