发明名称 |
Top layers of metal for high performance IC's |
摘要 |
A method of closely interconnecting integrated circuits contained within a semiconductor wafer to electrical circuits surrounding the semiconductor wafer. Electrical interconnects are held to a minimum in length by making efficient use of polyimide or polymer as an inter-metal dielectric thus enabling the integration of very small integrated circuits within a larger circuit environment at a minimum cost in electrical circuit performance.
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申请公布号 |
US7388292(B2) |
申请公布日期 |
2008.06.17 |
申请号 |
US20070845116 |
申请日期 |
2007.08.27 |
申请人 |
LIN MOU-SHIUNG |
发明人 |
LIN MOU-SHIUNG |
分类号 |
H01L27/10;H01L21/02;H01L21/44;H01L21/4763;H01L21/50;H01L21/768;H01L23/48;H01L23/52;H01L23/522;H01L23/525;H01L23/528;H01L23/532;H01L23/60;H01L27/06;H01L27/08;H01L29/40;H01L29/73;H01L29/74 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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