| 摘要 |
A method for measuring a thickness of a semiconductor device is provided to extract capacitance of a plane of a gate electrode by removing parasitic capacitance generated between a side surface of the gate electrode and a semiconductor substrate. A method for measuring a thickness of a semiconductor device includes the steps of: forming a gate oxide film(14) on a semiconductor substrate(12); dividing a gate electrode into a plurality of gate electrodes(16a,16b) to have the same area as a gate electrode to be measured; measuring capacitance between the semiconductor substrate and the gate electrodes except capacitance between side surfaces of the gate electrodes and the semiconductor substrate; and calculating a thickness of the gate oxide film from the measured capacitance.
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