发明名称 Dual damascene with via liner
摘要 A dual damascene structure with improved profiles and reduced defects and method of forming the same, the method including forming a first dielectric over a conductive area; forming a first dielectric insulator over the first dielectric; forming a first opening in the first dielectric insulator; lining the opening with a second dielectric; forming a second dielectric insulator over the first dielectric insulator; forming a second opening in the second dielectric insulator overlying and communicating with the first opening; and, filling the first and second openings with a conductive material to electrically communicate with the conductive area.
申请公布号 US7387961(B2) 申请公布日期 2008.06.17
申请号 US20050048486 申请日期 2005.01.31
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD 发明人 TSENG UWAY;HUANG ALEX;LIU KUN-SZU
分类号 H01L21/4763 主分类号 H01L21/4763
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